Overclocking and features of the latest DDR4 RAM modules.
Overclocking and features of the latest DDR4 RAM modules.
I've stepped away from RAM overclocking for a while, but I saw a new generation of chips with 2GB per die. I'm curious—do they perform well? Are there better options than a SAMSUNG B-die or Micron Rev.E?
I don't believe that's brand new. I think you're referring to 16GbIOCs (2GB per IC, 8x2 = 16GB). These have been available for some time. The only solid 16GbIOC I know of is the micron Rev B 16GbIOC, which can run well over 5000 with quality components and proper cooling. It's essentially an upgraded version of 8GbIOC but with more capacity and better performance. Builders have already made them up to 5000C18 in this video. I'm not sure about any other decent 16GbIOC that can achieve such speeds.
Micron 16Gb Rev. B delivers solid performance. It maintains stability better than B die, easily reaches 5000MHz, and offers solid overall timing (no tRC, tRAS, or tRFC issues—most other speeds are decent). In intense overclock situations it sometimes outperforms Samsung B die because you avoid pushing maximum memory when voltage exceeds 1.8V, making it better for RAM-heavy tests (though daily use still favors B die). This isn't the 8Gb Rev. B version, which falls short. Hynix DJR exists but isn't recognized for speed. The chip mainly excels at precise timing checks—ideal if you need accuracy over raw throughput.
With enough voltage it can easily exceed 5600 on air, but this is just an example assuming ideal conditions with top-tier boards and high voltage levels. It's quite intriguing, though not very consistent—some posts suggest around 4533, others near 5600. I wouldn't recommend joining this thread unless you're comfortable with unreliable results. Alternatively, maybe focus on selling bare PCBs myself while building something profitable. The hardware discussions mention up to 1.9v, which is clearly not practical for regular use. It seems like a risky bet unless you're okay with extreme voltage fluctuations.
I refer to the actual die density when mentioning 8Gb or 16Gb dies. This means 1GB per die and 2GB per die. The 8GB OEM modules with just 4 ICs are actually Micron Rev. B 16Gb, though they still have limitations—like an 1Rx16 setup which halves the bank groups, similar to running half rank. That’s why they’re not ideal. Micron Rev. E performs better. Dual-rank Rev. B 16Gb is quite reliable, and for consumer systems needing 64GB RAM, it’s the optimal choice. It handles overclocking well and delivers strong performance.
The best and quickest option seems to be the DDR5 from Samsung. B-Die DDR5 might exist but isn't widely known yet.