The system stops sending messages when I tweak any RAM settings at all.
The system stops sending messages when I tweak any RAM settings at all.
So I just built a new PC and decided to try overclocking it a little bit. I downloaded Thaiphoon burner and the Ryzen DRAM calculator, set everything correctly, and there was no post. The motherboard stayed stuck on CPU debug LED, peripherals didn't light up, and there was no video signal. After resetting CMOS, I played with voltages for a while, still getting no post. About ten times now. Then I also tried the MSI's "Memory try it" feature, which ended in the same result: no post. Could it be that I just didn't win the silicon lottery at all? RAM is stable with XMP. Specs: CPU: Ryzen 5 3600X @3.8Ghz, 4.3Ghz Turbo (PBO on) (no OC) (Stock cooler). MOBO: MSI B450 Tomahawk Max (flashed to the latest BIOS). RAM: 16GB G.Skill Trident Z RGB 3600Mhz CL18 2x8GB kit (F4-3600C18D-16GTZRX). GPU: Gigabyte GTX 1660 Ti GAMING OC 6G (GV-N16TGAMING OC-6GD). PSU: Corsair RM850X (2018 model). STORAGE: Samsung 860 Evo 1TB (Sata 3, 6Gb) (Boot drive, apps, games) and Seagate Barracuda 1TB 7200RPM HDD (Sata 3, 6Gb) (Backup drive). OS: Windows 10 Home (Build 2004). CASE: NZXT H510 (if needed). PERIPHERALS: (if needed). MONITOR: Samsung S27E510C. KEYBOARD: Corsair K70 RGB RAPIDFIRE. MOUSE: Logitech G502. SPEAKERS: Logitech Z333. Thanks, open to any questions.
It might be a bad label on your C die, since Gskill and Corsair make these mistakes way too often, so you could never get 3600CL16 working properly. But try using some of the troubleshooting tips I sent out before and see if that makes any difference.
RAM calculator isn't always perfect. Sometimes it gives wrong numbers for timing or voltage, and sometimes it just doesn't show up at all. On the other hand, you might have lost your luck buying chips like 3600CL18, which aren't great bins. Many ICs can do that speed. What chip did Thaiphoon mention, and what timings did the calculator give? You can check a guide on ram overclocking from 1usmus for more info. It's worth reading the troubleshooting section though: https://www.techpowerup.com/review/amd-r...ide/8.html
You shouldn't overclock your RAM too fast; you might run into problems that make things worse. If your memory is set for 3600MHz and has 16GB of it, I think that's pretty good and you can just leave it be. The trouble with high-speed RAM is this: it usually comes in one of two shapes. It either means you had to buy a whole bunch of 3600/18 kits because someone ordered them all at once. Or it could be leftover memory after the factory sorting process messed up, and it accidentally got sorted as a good 3600/18 when it wasn't meant to be. When that happens, the original maker sells those 3600/18 sticks to third-party sellers like HP or Dell at top prices. That means you have a three-in-three chance: sometimes nothing will break if you don't mess with timings, but sometimes it could break without even trying, and sometimes it might totally fail.
Hi, I suppose this is everything you need, I have also tried playing with the SoC voltages and the DRAM voltages, nothing helped. DRAM calculator: https://prnt.sc/svg7oq MANUFACTURING DESCRIPTION Module Manufacturer: G.Skill Module Part Number: F4-3600C18-8GTZRX Module Series: Trident Z RGB for AMD DRAM Manufacturer: Samsung DRAM Components: K4A8G085WB-BCPB DRAM Die Revision / Process Node: B / 20 nm Module Manufacturing Date: Undefined Module Manufacturing Location: Taipei, Taiwan Module Serial Number: 00000000h Module PCB Revision: 00h PHYSICAL & LOGICAL ATTRIBUTES Fundamental Memory Class: DDR4 SDRAM Module Speed Grade: DDR4-2133 Base Module Type: UDIMM (133.35 mm) Module Capacity: 8 GB Reference Raw Card: A1 (10 layers) JEDEC Raw Card Designer: SK hynix Module Nominal Height: 31 < H <= 32 mm Module Thickness Maximum, Front: 1 < T <= 2 mm Module Thickness Maximum, Back: 1 < T <= 2 mm Number of DIMM Ranks: 1 Address Mapping from Edge Connector to DRAM: Standard DRAM Device Package: Standard Monolithic DRAM Device Package Type: 78-ball FBGA DRAM Device Die Count: Single die Signal Loading: Not specified Number of Column Addresses: 10 bits Number of Row Addresses: 16 bits Number of Bank Addresses: 2 bits (4 banks) Bank Group Addressing: 2 bits (4 groups) DRAM Device Width: 8 bits Programmed DRAM Density: 8 Gb Calculated DRAM Density: 8 Gb Number of DRAM components: 8 DRAM Page Size: 1 KB Primary Memory Bus Width: 64 bits Memory Bus Width Extension: 0 bits DRAM Post Package Repair: Supported Soft Post Package Repair: Supported DRAM TIMING PARAMETERS Fine Timebase: 0.001 ns Medium Timebase: 0.125 ns CAS Latencies Supported: 10T, 11T, 12T, 13T, 14T, 15T, 16T Minimum Clock Cycle Time (tCK min): 0.938 ns (1066.10 MHz) Maximum Clock Cycle Time (tCK max): 1.600 ns (625.00 MHz) CAS# Latency Time (tAA min): 13.750 ns RAS# to CAS# Delay Time (tRCD min): 13.750 ns Row Precharge Delay Time (tRP min): 13.750 ns Active to Precharge Delay Time (tRAS min): 33.000 ns Act to Act/Refresh Delay Time (tRC min): 46.750 ns Normal Refresh Recovery Delay Time (tRFC1 min): 350.000 ns 2x mode Refresh Recovery Delay Time (tRFC2 min): 260.000 ns 4x mode Refresh Recovery Delay Time (tRFC4 min): 160.000 ns Short Row Active to Row Active Delay (tRRD_S min): 3.700 ns Long Row Active to Row Active Delay (tRRD_L min): 5.300 ns Write Recovery Time (tWR min): 15.000 ns Short Write to Read Command Delay (tWTR_S min): 2.500 ns Long Write to Read Command Delay (tWTR_L min): 7.500 ns Long CAS to CAS Delay Time (tCCD_L min): 5.625 ns Four Active Windows Delay (tFAW min): 21.000 ns Maximum Active Window (tMAW): 8192*tREFI Maximum Activate Count (MAC): Unlimited MAC DRAM VDD 1.20 V operable/endurant: Yes/Yes THERMAL PARAMETERS Module Thermal Sensor: Not Incorporated INTEGRATED TEMPERATURE SENSOR Manufacturer: OnSemi Model: N34TS04 Revision: 30h Temperature Monitor Status: Active Current Ambient Temperature: 38.688 °C Sensor Resolution: 0.0625 °C (12-bit ADC) Accuracy over the active range (75 °C to 95 °C): ±1 °C Accuracy over the monitoring range (40 °C to 125 °C): ±2 °C Open-drain Event Output: Disabled 10V of VHV on A0 pin: Supported Negative Temperature Measurements: Supported Interrupt capabilities: Supported SMBus timeout period for TS access: 25 to 35 ms SPD PROTOCOL SPD Revision: 1.1 SPD Bytes Total: 512 SPD Bytes Used: 384 SPD Checksum (Bytes 00h-7Dh): 242Dh (OK) SPD Checksum (Bytes 80h-FDh): A01Ch (OK) PART NUMBER DETAILS JEDEC DIMM Label: 8GB 1Rx8 PC4-2133-UA1-11 Frequency CAS RCD RP RAS RC RRDS RRDL WR WTRS WTRL FAW 1067 MHz 16 15 15 36 50 4 6 16 3 8 23 1067 MHz 15 15 15 36 50 4 6 16 3 8 23 933 MHz 14 13 13 31 44 4 5 14 3 7 20 933 MHz 13 13 13 31 44 4 5 14 3 7 20 800 MHz 12 11 11 27 38 3 5 12 2 6 17 800 MHz 11 11 11 27 38 3 5 12 2 6 17 667 MHz 10 10 10 22 32 3 4 10 2 5 14 INTEL EXTREME MEMORY PROFILES XMP PARAMETER PROFILE 1 PROFILE 2 Profiles Revision: 2.0 Profile 1 (Certified) Enables: Yes Profile 2 (Extreme) Enables: No Profile 1 Channel Config: 2 DIMM/channel Speed Grade: DDR4-3604 N/A DRAM Clock Frequency: 1802 MHz N/A Module VDD Voltage Level: 1.35 V N/A Minimum DRAM Cycle Time (tCK): 0.555 ns N/A CAS Latencies Supported: 18T N/A CAS Latency Time (tAA): 9.759 ns N/A RAS# to CAS# Delay Time (tRCD): 12.039 ns N/A Row Precharge Delay Time (tRP): 12.039 ns N/A Active to Precharge Delay Time (tRAS): 23.250 ns N/A Active to Active/Refresh Delay Time (tRC): 35.479 ns N/A Four Activate Window Delay Time (tFAW): 24.000 ns N/A Short Activate to Activate Delay Time (tRRD_S): 2.029 ns N/A Long Activate to Activate Delay Time (tRRD_L): 4.849 ns N/A Normal Refresh Recovery Delay Time (tRFC1): 350.000 ns N/A 2x mode Refresh Recovery Delay Time (tRFC2): 260.000 ns N/A 4x mode Refresh Recovery Delay Time (tRFC4): 160.000 ns N/A Hi, sorry, forgot to specify I only wanted to tighten the timings. (16-21-21-42) + subtimings.
It could be a bad C die because Gskill and Corsair often make these mistakes instead of fixing them properly. If you have this problem, you might not even get to 3600CL16. But check the troubleshooting tips I sent before and see if they work for you.
Oh my god, thank you so much! I honestly didn't think about that before, just went to the motherboard's QVL list and sure enough it was SK Hynix C-die. The only question left is which is better for overclocking? Just wondering. Thank you so much.