Samsung OEM DDR4 OC options
Samsung OEM DDR4 OC options
I own a Ryzen 7 2700 on an Aorus X570 Elite with two Samsung OEM 16GB DDR4 B-Die modules (M378A2K43BB1-CRC). Right now I'm using CL16-17-17-39 at 3133MHz with 1.43V DRAM and 1.25V SOC voltage. I'm looking for advice on how to slightly boost the overclocking performance. Thanks ahead!
X299 only provides VCCSA and VCCIO signals, not SOC voltage. It seems the 1.2V threshold isn't critical because the 3133MHz CL16 chip handles memory controller demands well. Keep adjusting tCL, tRCD, tRP, tRAS, and tCR to auto mode, reducing them gradually one step at a time.
1.2 VSOC represents the highest safe threshold; operating beyond it poses risks. Consider using Thyphoon Burner and Ryzen DRAM Calculator. Generally effective, but adjustments may be needed for stability with high speeds. For best results, try a configuration like 14-14-14-34-48 at 3000MHz—adjust command rate if necessary.
I found something intriguing before the sequence 14-16-16-36-55 at 1.28V worked perfectly stable, but 14-14-14-36-55 at 1.43V didn’t hold up at all. These items appear to have a maximum performance threshold, with one timing around 15 or 16 where I can’t go lower.
Usually I raise the voltage when stability drops. Started at 1.35V, then adjusted to 1.4, 1.45 if timing fails, up to 1.5 just for testing. For stable runs around 14-16-16-36-55 at 1.28, tried 14-15-16-16-36 with 1.35, then 14-15-15-36-55. Also experimented with tRRDS and tRRDL at 7 and 7—memory unclear if any timing should match the others. Watching Builzoid's videos might help. If you can't lower the settings further, consider using 2T command rate, though it adds some latency and isn't always ideal with B dies.