Question Are you experiencing low usage and low FPS in Escape from Tarkov?

M

Morvaxx

01-08-2026, 03:09 AM #11

You used CrystalDiskInfo instead of CrystalDiskMark, but that's not ideal when it reports 46%

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T

thefrogkid

01-08-2026, 04:15 PM #12

Would it be wise to purchase a new SSD for your Windows installation?

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X

Your drive is handling at 2133mhz instead of the expected 3600, which negatively affects Ryzen performance. Are you considering two kits of RAM? Checking the part numbers suggests they might not work well together.

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H

hawk5strike

01-15-2026, 05:34 AM #14

The crystalDiskMark result shows performance metrics for CrystalDiskMark 8.0.4 Shizuku Edition x64 © released in 2007-2021.
More details can be found at https://crystalmark.info/.

Key values: MB/s conversion rates are provided, along with byte units and IOPS information.
The test was conducted on a 1MiB read operation with various configurations, and the results were recorded under default settings.
The system used Windows 11 Professional version 10.0 Build 22631, x64 architecture.

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M

MattIXC

01-15-2026, 03:48 PM #15

I double-checked in the bios if I had XMP on and it was disabled I enabled it and got this.
"Sorry if it is too long, I am not sure what I should provide and not provide":
[General Information]
Total Memory Size: 64 GBytes
Total Memory Size [MB]: 65536
[Current Performance Settings]
Maximum Supported Memory Clock: Unlimited
Current Memory Clock: 1800.0 MHz
Current Timing (tCAS-tRCD-tRP-tRAS): 18-22-22-42
Memory Channels Supported: 2
Memory Channels Active: 2
Command Rate (CR): 1T
Read to Read Delay (tRDRD_SC) Same Chipselect: 1T
Read to Read Delay (tRDRD_SG/TrdrdScL) Same Bank Group: 5T
Read to Read Delay (tRDRD_SD) Same DIMM: 6T
Read to Read Delay (tRDRD_DD) Different DIMM: 7T
Write to Write Delay (tWRWR_SC) Same Chipselect: 1T
Write to Write Delay (tWRWR_SG/TwrwrScL) Same Bank Group: 5T
Write to Write Delay (tWRWR_SD) Same DIMM: 9T
Write to Write Delay (tWRWR_DD) Different DIMM: 9T
Read to Write Delay (tRDWR_SC) Same Chipselect: 12T
Read to Write Delay (tRDWR_SG/TrdwrScL) Same Bank Group: 12T
Read to Write Delay (tRDWR_DG/TrdwrScDlr) Different Bank Group: 12T
Read to Write Delay (tRDWR_SD) Same DIMM: 12T
Read to Write Delay (tRDWR_DD) Different DIMM: 12T
Write to Read Delay (tWRRD_SC) Same Chipselect: 4T
Write to Read Delay (tWRRD_SG/TwrrdScL) Same Bank Group: 4T
Write to Read Delay (tWRRD_SD) Same DIMM: 4T
Write to Read Delay (tWRRD_DD) Different DIMM: 4T
Read to Precharge Delay (tRTP): 14T
Write to Precharge Delay (tWTP): 37T
Write Recovery Time (tWR): 26T
RAS# to RAS# Delay (tRRD_L): 10T
RAS# to RAS# Delay (tRRD_S): 7T
Row Cycle Time (tRC): 85T
Refresh Cycle Time (tRFC): 631T
Four Activate Window (tFAW): 38T
Row: 0 [P0 CHANNEL A/DIMM 0] - 16 GB PC4-28800 DDR4 SDRAM G.Skill F4-3600C16-16GTZNC
[General Module Information]
Module Number: 0
Module Size: 16 GBytes
Memory Type: DDR4 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 1801.8 MHz (DDR4-3603 / PC4-28800)
Module Manufacturer: G.Skill
Module Part Number: F4-3600C16-16GTZNC
Module Revision: 0.0
Module Serial Number: N/A
Module Manufacturing Date: N/A
Module Manufacturing Location: 0
SDRAM Manufacturer: SK Hynix
DRAM Steppping: 0.0
Error Check/Correction: None
[Module Characteristics]
Row Address Bits: 16
Column Address Bits: 10
Module Density: 8192 Mb
Number Of Ranks: 2
Number Of Bank Groups: 4
Device Width: 8 bits
Bus Width: 64 bits
Die Count: 1
Module Nominal Voltage (VDD): 1.2 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.93800 ns (1066 MHz)
Maximum SDRAM Cycle Time (tCKAVGmax): 1.50000 ns
CAS# Latencies Supported: 10, 11, 12, 13, 14, 15, 16
Minimum CAS# Latency Time (tAAmin): 13.750 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.750 ns
Minimum Row Precharge Time (tRPmin): 13.750 ns
Minimum Active to Precharge Time (tRASmin): 33.000 ns
Supported Module Timing at 1066.7 MHz: 15-15-15-36
Supported Module Timing at 933.3 MHz: 13-13-13-31
Supported Module Timing at 800.0 MHz: 11-11-11-27
Supported Module Timing at 666.7 MHz: 10-10-10-22
Minimum Active to Active/Refresh Time (tRCmin): 46.750 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.700 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.300 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.625 ns
[Features]
Module Temperature Sensor (TSOD): Not Supported
Module Nominal Height: 31 - 32 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Mirrored
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 2.0
[Certified Profile [Enabled]]
Module VDD Voltage Level: 1.35 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.55500 ns (1800 MHz)
CAS# Latencies Supported: 16
Minimum CAS# Latency Time (tAAmin): 8.869 ns
Minimum RAS# to CAS# Delay (tRCDmin): 10.454 ns
Minimum Row Precharge Time (tRPmin): 10.454 ns
Minimum Active to Precharge Time (tRASmin): 21.625 ns
Supported Module Timing at 1800.0 MHz: 16-19-19-39
Supported Module Timing at 1733.3 MHz: 16-19-19-38
Minimum Active to Active/Refresh Time (tRCmin): 32.125 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 24.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 2.029 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 4.849 ns
Row: 1 - 16 GB PC4-28800 DDR4 SDRAM G.Skill F4-3600C16-16GTZNC ------------
[General Module Information]
Module Number: 1
Module Size: 16 GBytes
Memory Type: DDR4 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 1801.8 MHz (DDR4-3603 / PC4-28800)
Module Manufacturer: G.Skill
Module Part Number: F4-3600C16-16GTZNC
Module Revision: 0.0
Module Serial Number: N/A
Module Manufacturing Date: N/A
Module Manufacturing Location: 0
SDRAM Manufacturer: SK Hynix
DRAM Steppping: 0.0
Error Check/Correction: None
[Module Characteristics]
Row Address Bits: 16
Column Address Bits: 10
Module Density: 8192 Mb
Number Of Ranks: 2
Number Of Bank Groups: 4
Device Width: 8 bits
Bus Width: 64 bits
Die Count: 1
Module Nominal Voltage (VDD): 1.2 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.93800 ns (1066 MHz)
Maximum SDRAM Cycle Time (tCKAVGmax): 1.50000 ns
CAS# Latencies Supported: 10, 11, 12, 13, 14, 15, 16
Minimum CAS# Latency Time (tAAmin): 13.750 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.750 ns
Minimum Row Precharge Time (tRPmin): 13.750 ns
Minimum Active to Precharge Time (tRASmin): 33.000 ns
Supported Module Timing at 1066.7 MHz: 15-15-15-36
Supported Module Timing at 933.3 MHz: 13-13-13-31
Supported Module Timing at 800.0 MHz: 11-11-11-27
Supported Module Timing at 666.7 MHz: 10-10-10-22
Minimum Active to Active/Refresh Time (tRCmin): 46.750 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.700 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.300 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.625 ns
[Features]
Module Temperature Sensor (TSOD): Not Supported
Module Nominal Height: 31 - 32 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Mirrored
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 2.0
[Certified Profile [Enabled]]
Module VDD Voltage Level: 1.35 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.55500 ns (1800 MHz)
CAS# Latencies Supported: 16
Minimum CAS# Latency Time (tAAmin): 8.869 ns
Minimum RAS# to CAS# Delay (tRCDmin): 10.454 ns
Minimum Row Precharge Time (tRPmin): 10.454 ns
Minimum Active to Precharge Time (tRASmin): 21.625 ns
Supported Module Timing at 1800.0 MHz: 16-19-19-39
Supported Module Timing at 1733.3 MHz: 16-19-19-38
Minimum Active to Active/Refresh Time (tRCmin): 32.125 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 24.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 2.029 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 4.849 ns
Row: 2 - 16 GB PC4-28700 DDR4 SDRAM Corsair CMW32GX4M2D3600C18 ------------
[General Module Information]
Module Number: 2
Module Size: 16 GBytes
Memory Type: DDR4 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 1798.6 MHz (DDR4-3597 / PC4-28700)
Module Manufacturer: Corsair
Module Part Number: CMW32GX4M2D3600C18
Module Revision: 0.0
Module Serial Number: N/A
Module Manufacturing Date: N/A
Module Manufacturing Location: 0
SDRAM Manufacturer: SK Hynix
DRAM Steppping: 0.0
Error Check/Correction: None
[Module Characteristics]
Row Address Bits: 16
Column Address Bits: 10
Module Density: 8192 Mb
Number Of Ranks: 2
Number Of Bank Groups: 4
Device Width: 8 bits
Bus Width: 64 bits
Die Count: 1
Minimum SDRAM Cycle Time (tCKAVGmin): 0.93800 ns (1066 MHz)
Maximum SDRAM Cycle Time (tCKAVGmax): 1.50000 ns
CAS# Latencies Supported: 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24
Minimum CAS# Latency Time (tAAmin): 13.500 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.500 ns
Minimum Row Precharge Time (tRPmin): 13.500 ns
Minimum Active to Precharge Time (tRASmin): 33.000 ns
Supported Module Timing at 1066.7 MHz: 15-15-15-36
Supported Module Timing at 933.3 MHz: 13-13-13-31
Supported Module Timing at 800.0 MHz: 11-11-11-27
Supported Module Timing at 666.7 MHz: 9-9-9-22
Supported Module Timing at 533.3 MHz: 8-8-8-18
Minimum Active to Active/Refresh Time (tRCmin): 46.500 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.700 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.300 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.356 ns
[Features]
Module Temperature Sensor (TSOD): Supported
Module Nominal Height: 31 - 32 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Mirrored
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 2.0
[Certified Profile [Enabled]]
Module VDD Voltage Level: 1.35 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.55600 ns (1800 MHz)
CAS# Latencies Supported: 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24
Minimum CAS# Latency Time (tAAmin): 9.998 ns
Minimum RAS# to CAS# Delay (tRCDmin): 12.222 ns
Minimum Row Precharge Time (tRPmin): 12.222 ns
Minimum Active to Precharge Time (tRASmin): 23.250 ns
Supported Module Timing at 1800.0 MHz: 18-22-22-42
Supported Module Timing at 1733.3 MHz: 18-22-22-41
Supported Module Timing at 1666.7 MHz: 17-21-21-39
Supported Module Timing at 1600.0 MHz: 16-20-20-38
Supported Module Timing at 1466.7 MHz: 15-18-18-35
Supported Module Timing at 1333.3 MHz: 14-17-17-31
Supported Module Timing at 1200.0 MHz: 12-15-15-28
Supported Module Timing at 1066.7 MHz: 11-14-14-25
Supported Module Timing at 933.3 MHz: 10-12-12-22
Supported Module Timing at 800.0 MHz: 8-10-10-19
Supported Module Timing at 666.7 MHz: 7-9-9-16
Minimum Active to Active/Refresh Time (tRCmin): 35.625 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 22.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.892 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.560 ns
Row: 3 [P0 CHANNEL B/DIMM 1] - 16 GB PC4-28700 DDR4 SDRAM Corsair CMW32GX4M2D3600C18
[General Module Information]
Module Number: 3
Module Size: 16 GBytes
Memory Type: DDR4 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 1798.6 MHz (DDR4-3597 / PC4-28700)
Module Manufacturer: Corsair
Module Part Number: CMW32GX4M2D3600C18
Module Revision: 0.0
Module Serial Number: N/A
Module Manufacturing Date: N/A
Module Manufacturing Location: 0
SDRAM Manufacturer: SK Hynix
DRAM Steppping: 0.0
Error Check/Correction: None
[Module Characteristics]
Row Address Bits: 16
Column Address Bits: 10
Module Density: 8192 Mb
Number Of Ranks: 2
Number Of Bank Groups: 4
Device Width: 8 bits
Bus Width: 64 bits
Die Count: 1
Minimum SDRAM Cycle Time (tCKAVGmin): 0.93800 ns (1066 MHz)
Maximum SDRAM Cycle Time (tCKAVGmax): 1.50000 ns
CAS# Latencies Supported: 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24
Minimum CAS# Latency Time (tAAmin): 13.500 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.500 ns
Minimum Row Precharge Time (tRPmin): 13.500 ns
Minimum Active to Precharge Time (tRASmin): 33.000 ns
Supported Module Timing at 1066.7 MHz: 15-15-15-36
Supported Module Timing at 933.3 MHz: 13-13-13-31
Supported Module Timing at 800.0 MHz: 11-11-11-27
Supported Module Timing at 666.7 MHz: 9-9-9-22
Supported Module Timing at 533.3 MHz: 8-8-8-18
Minimum Active to Active/Refresh Time (tRCmin): 46.500 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.700 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.300 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.356 ns
[Features]
Module Temperature Sensor (TSOD): Supported
Module Nominal Height: 31 - 32 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Mirrored
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 2.0
[Certified Profile [Enabled]]
Module VDD Voltage Level: 1.35 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.55600 ns (1800 MHz)
CAS# Latencies Supported: 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24
Minimum CAS# Latency Time (tAAmin): 9.998 ns
Minimum RAS# to CAS# Delay (tRCDmin): 12.222 ns
Minimum Row Precharge Time (tRPmin): 12.222 ns
Minimum Active to Precharge Time (tRASmin): 23.250 ns
Supported Module Timing at 1800.0 MHz: 18-22-22-42
Supported Module Timing at 1733.3 MHz: 18-22-22-41
Supported Module Timing at 1666.7 MHz: 17-21-21-39
Supported Module Timing at 1600.0 MHz: 16-20-20-38
Supported Module Timing at 1466.7 MHz: 15-18-18-35
Supported Module Timing at 1333.3 MHz: 14-17-17-31
Supported Module Timing at 1200.0 MHz: 12-15-15-28
Supported Module Timing at 1066.7 MHz: 11-14-14-25
Supported Module Timing at 933.3 MHz: 10-12-12-22
Supported Module Timing at 800.0 MHz: 8-10-10-19
Supported Module Timing at 666.7 MHz: 7-9-9-16
Minimum Active to Active/Refresh Time (tRCmin): 35.625 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 22.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.892 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.560 ns

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Y

yannsolo28

01-15-2026, 05:31 PM #16

Would you like me to rerun UBM and share the outcomes?

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F

Freedom_Men

01-17-2026, 05:04 AM #17

Yes, the same issues persist in the game.

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Z

ZombieMagneto

01-22-2026, 12:44 AM #18

I haven't managed to complete the UBN yet, and yes the game feels smoother but the FPS and usage remain unchanged.

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M

M4blast

01-22-2026, 12:56 AM #19

I performed another test after a clean boot of my PC. Here are the results.

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J

Jelmerro

01-24-2026, 09:25 AM #20

Did you update the latest AMD chipset drivers?
How warm is your CPU during gaming or when under heavy use?
Would you consider installing Windows on an NVMe storage device?

Reply