Is it secure to boost the DRAM in the C-die to 1.4 volts at 65°C?
Is it secure to boost the DRAM in the C-die to 1.4 volts at 65°C?
It wasn't marked as a B-Die on the finder possibly due to the Thaiphoon burner's node size being inaccurate. The 20nm B-Die fits well at 3200, making it a 14-14-14-34 configuration. From this, I understand it isn't the "fast b-die" under $100, though any 10nm Samsung option could work. Even 10nm B-Dies are comparable; C-Die 10nm and 10nm A-Dies have since taken over.
The Thaiphoon burner isn't always reliable. I used a D-die kit and it displayed it as a B-die, which others have observed too. A RAM package rated for 3200 16-18-18 could actually be any chip. Hynix might be B-die if you're lucky, just like with GSkill's 3800 14-16-16 where B-die is certain. You can usually identify the die by checking the sticker on the memory chips or by how it behaves during overclocking. With a B-die, all primary timings change with voltage, while other chips only have the first timing affected and the others depend on silicon quality.
There are numerous Hynix memory options available, such as A-Die and B-Dies, which often don’t always work well with Ryzen processors. Based on my observations, B-Dies tend to improve timing more significantly, allowing for slightly higher clock speeds due to their performance at 1.5v. Most users don’t exceed the XMP settings much, and 3600 CL16 C-Dies offer only a modest 30% cost reduction with minimal impact on secondary timings—clearly not enough to affect everyday performance or noticeable in tests.
Hi, your setup shows strong performance but you're asking about safe limits. For Samsung chips and RAM, typical safe operating temperatures are around 80°C to 85°C under load. Keep an eye on temps—especially during overclocking—to avoid damage. Your current readings in the mid-60s Celsius is within normal range, but staying below 70°C is wise for longevity.