The system remains inactive even with minor changes to the RAM configuration.
The system remains inactive even with minor changes to the RAM configuration.
Hi,
I recently assembled a new PC and started experimenting with overclocking. I downloaded the Thaiphoon burner and Ryzen DRAM calculator, adjusted all settings properly, and everything seemed fine—no post, the motherboard remained stuck on the CPU debug LED, peripherals didn’t light up, there was no video signal, and it worked as expected. I reset the CMOS, tried different voltages for a short while, but still nothing. I also used MSI’s “Memory try it” feature, which didn’t produce any results either. It seems like I might not have succeeded in getting stable performance. The RAM is stable with XMP settings.
Specs:
CPU: Ryzen 5 3600X @3.8Ghz, 4.3Ghz Turbo (PBO on) – no OC, stock cooler
MOBO: MSI B450 Tomahawk Max (flashed to latest BIOS)
RAM: 16GB G.Skill Trident Z RGB 3600Mhz CL18 2x8GB kit (F4-3600C18D-16GTZRX)
GPU: Gigabyte GTX 1660 Ti GAMING OC 6G (GV-N166TGAMING OC-6GD)
PSU: Corsair RM850X (2018 model)
Storage:
Samsung 860 Evo 1TB (SATA 3, 6Gb) – boot drive, apps, games
Seagate Barracuda 1TB 7200RPM HDD (SATA 3, 6Gb) – backup drive
OS: Windows 10 Home (Build 2004)
CASE: NZXT H510 (if needed)
Peripherals: (as required)
Monitor: Samsung S27E510C
Keyboard: Corsair K70 RGB RAPIDFIRE
Mouse: Logitech G502
Speakers: Logitech Z333
Thanks,
Open to any questions.
It's conceivable this could be incorrectly labeled C die, since Gskill and Corsair often make such errors. If that's the case, you might not be able to reach 3600CL16 at all. However, give the troubleshooting tips I provided earlier a try and see if they assist.
DRAM calculator isnt always 100% correct, for timings or voltage. Sometimes the values it spits it just wont post at all. On the other hand, it is also very possible that you "lost" the silicon lottery, as 3600CL18 is not a very impressive bin, and a ton of ICs can do it. What IC did Thaiphoon say it was, and what timings did dram calculator give you?
1usmus also made a guide for ram overclocking, and the whole thing is worth a read, but here's the section on troubleshooting, which may help:
https://www.techpowerup.com/review/amd-r...ide/8.html
You should avoid increasing the OC speed unless necessary, as doing so may lead to fclock problems and further degrade performance. The most viable option is to adjust the timing settings; if the RAM reaches 3600/16, it would be considered a success and you can leave it unchanged.
The challenge with high CAS RAM lies in its nature—it either fulfills the required contract (such as ordering 3600/18 kits) or becomes a leftover after the binning process failed 3600/16 but passed 3600/18. Once this happens, the OEM typically sells the 3600/18 units to third-party vendors like HP, Dell, or Lenovo.
This situation gives you a 33/33/33% probability: tightening timings might be safe, but it could also lead to failure without drastic actions or result in total failure.
Hi,
I suppose this is everything you need, I have also tried playing with the SoC voltages and the DRAM voltages, nothing helped.
DRAM calculator:
https://prnt.sc/svg7oq
MANUFACTURING DESCRIPTION
Module Manufacturer:
G.Skill
Module Part Number:
F4-3600C18-8GTZRX
Module Series:
Trident Z RGB for AMD
DRAM Manufacturer:
Samsung
DRAM Components:
K4A8G085WB-BCPB
DRAM Die Revision / Process Node:
B / 20 nm
Module Manufacturing Date:
Undefined
Module Manufacturing Location:
Taipei, Taiwan
Module Serial Number:
00000000h
Module PCB Revision:
00h
PHYSICAL & LOGICAL ATTRIBUTES
Fundamental Memory Class:
DDR4 SDRAM
Module Speed Grade:
DDR4-2133
Base Module Type:
UDIMM (133.35 mm)
Module Capacity:
8 GB
Reference Raw Card:
A1 (10 layers)
JEDEC Raw Card Designer:
SK hynix
Module Nominal Height:
31 < H <= 32 mm
Module Thickness Maximum, Front:
1 < T <= 2 mm
Module Thickness Maximum, Back:
1 < T <= 2 mm
Number of DIMM Ranks:
1
Address Mapping from Edge Connector to DRAM:
Standard
DRAM Device Package:
Standard Monolithic
DRAM Device Package Type:
78-ball FBGA
DRAM Device Die Count:
Single die
Signal Loading:
Not specified
Number of Column Addresses:
10 bits
Number of Row Addresses:
16 bits
Number of Bank Addresses:
2 bits (4 banks)
Bank Group Addressing:
2 bits (4 groups)
DRAM Device Width:
8 bits
Programmed DRAM Density:
8 Gb
Calculated DRAM Density:
8 Gb
Number of DRAM components:
8
DRAM Page Size:
1 KB
Primary Memory Bus Width:
64 bits
Memory Bus Width Extension:
0 bits
DRAM Post Package Repair:
Supported
Soft Post Package Repair:
Supported
DRAM TIMING PARAMETERS
Fine Timebase:
0.001 ns
Medium Timebase:
0.125 ns
CAS Latencies Supported:
10T, 11T, 12T, 13T,
14T, 15T, 16T
Minimum Clock Cycle Time (tCK min):
0.938 ns (1066.10 MHz)
Maximum Clock Cycle Time (tCK max):
1.600 ns (625.00 MHz)
CAS# Latency Time (tAA min):
13.750 ns
RAS# to CAS# Delay Time (tRCD min):
13.750 ns
Row Precharge Delay Time (tRP min):
13.750 ns
Active to Precharge Delay Time (tRAS min):
33.000 ns
Act to Act/Refresh Delay Time (tRC min):
46.750 ns
Normal Refresh Recovery Delay Time (tRFC1 min):
350.000 ns
2x mode Refresh Recovery Delay Time (tRFC2 min):
260.000 ns
4x mode Refresh Recovery Delay Time (tRFC4 min):
160.000 ns
Short Row Active to Row Active Delay (tRRD_S min):
3.700 ns
Long Row Active to Row Active Delay (tRRD_L min):
5.300 ns
Write Recovery Time (tWR min):
15.000 ns
Short Write to Read Command Delay (tWTR_S min):
2.500 ns
Long Write to Read Command Delay (tWTR_L min):
7.500 ns
Long CAS to CAS Delay Time (tCCD_L min):
5.625 ns
Four Active Windows Delay (tFAW min):
21.000 ns
Maximum Active Window (tMAW):
8192*tREFI
Maximum Activate Count (MAC):
Unlimited MAC
DRAM VDD 1.20 V operable/endurant:
Yes/Yes
THERMAL PARAMETERS
Module Thermal Sensor:
Not Incorporated
INTEGRATED TEMPERATURE SENSOR
Manufacturer:
OnSemi
Model:
N34TS04
Revision:
30h
Temperature Monitor Status:
Active
Current Ambient Temperature:
38.688 °C
Sensor Resolution:
0.0625 °C (12-bit ADC)
Accuracy over the active range (75 °C to 95 °C):
±1 °C
Accuracy over the monitoring range (40 °C to 125 °C):
±2 °C
Open-drain Event Output:
Disabled
10V of VHV on A0 pin:
Supported
Negative Temperature Measurements:
Supported
Interrupt capabilities:
Supported
SMBus timeout period for TS access:
25 to 35 ms
SPD PROTOCOL
SPD Revision:
1.1
SPD Bytes Total:
512
SPD Bytes Used:
384
SPD Checksum (Bytes 00h-7Dh):
242Dh (OK)
SPD Checksum (Bytes 80h-FDh):
A01Ch (OK)
PART NUMBER DETAILS
JEDEC DIMM Label:
8GB 1Rx8 PC4-2133-UA1-11
Frequency
CAS
RCD
RP
RAS
RC
RRDS
RRDL
WR
WTRS
WTRL
FAW
1067 MHz
16
15
15
36
50
4
6
16
3
8
23
1067 MHz
15
15
15
36
50
4
6
16
3
8
23
933 MHz
14
13
13
31
44
4
5
14
3
7
20
933 MHz
13
13
13
31
44
4
5
14
3
7
20
800 MHz
12
11
11
27
38
3
5
12
2
6
17
800 MHz
11
11
11
27
38
3
5
12
2
6
17
667 MHz
10
10
10
22
32
3
4
10
2
5
14
INTEL EXTREME MEMORY PROFILES
XMP PARAMETER
PROFILE 1
PROFILE 2
Profiles Revision: 2.0
Profile 1 (Certified) Enables: Yes
Profile 2 (Extreme) Enables: No
Profile 1 Channel Config: 2 DIMM/channel
Speed Grade:
DDR4-3604
N/A
DRAM Clock Frequency:
1802 MHz
N/A
Module VDD Voltage Level:
1.35 V
N/A
Minimum DRAM Cycle Time (tCK):
0.555 ns
N/A
CAS Latencies Supported:
18T
N/A
CAS Latency Time (tAA):
9.759 ns
N/A
RAS# to CAS# Delay Time (tRCD):
12.039 ns
N/A
Row Precharge Delay Time (tRP):
12.039 ns
N/A
Active to Precharge Delay Time (tRAS):
23.250 ns
N/A
Active to Active/Refresh Delay Time (tRC):
35.479 ns
N/A
Four Activate Window Delay Time (tFAW):
24.000 ns
N/A
Short Activate to Activate Delay Time (tRRD_S):
2.029 ns
N/A
Long Activate to Activate Delay Time (tRRD_L):
4.849 ns
N/A
Normal Refresh Recovery Delay Time (tRFC1):
350.000 ns
N/A
2x mode Refresh Recovery Delay Time (tRFC2):
260.000 ns
N/A
4x mode Refresh Recovery Delay Time (tRFC4):
160.000 ns
N/A
Hi,
sorry, forgot to specify I only wanted to tighten the timings. (16-21-21-42) + subtimings.
It's conceivable this could be incorrectly labeled C die, since Gskill and Corsair often make such errors. If that's the case, you might not be able to reach 3600CL16 at all. However, give the troubleshooting tips I provided earlier a try and see if they assist.